丝印：20N60M2EP；Package：D2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in a D²PAK package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description This device i

文件：475.9 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体

丝印：20N60M2EP；Package：I2PAK；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in an I²PAK package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description This device i

文件：262.029 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：20N60M2EP；Package：TO-247；N-channel 600 V, 0.230 Ω typ., 13 A MDmesh™ M2 EP Power MOSFET in a TO-247 package

Features • Extremely low gate charge • Excellent output capacitance (COSS) profile • Very low turn-off switching losses • 100 avalanche tested • Zener-protected Applications • Switching applications • Tailored for very high frequency converters (f > 150 kHz) Description This device i

文件：275.09 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体