RM20N650T2芯片丝印Marking-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
RM20N650HD	文件：1.50672 Mbytes Page：11 Pages	丝印：20N650；Package：TO-220F；N Channel Super Junction Power MOSFET III Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant 文件：1.50672 Mbytes 页数：11 Pages	RECTRON 丽正国际	RECTRON
RM20N650T2	文件：1.50672 Mbytes Page：11 Pages	丝印：20N650；Package：TO-220；N Channel Super Junction Power MOSFET III Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant 文件：1.50672 Mbytes 页数：11 Pages	RECTRON 丽正国际	RECTRON
RM20N650TI	文件：1.50672 Mbytes Page：11 Pages	丝印：20N650；Package：TO-263；N Channel Super Junction Power MOSFET III Features New technology for high voltage device Low on-resistance and low conduction losses. Small package Ulra Low Gate Charge cause lower diving requirements. 100% Avalanche Tested ROHS compliant 文件：1.50672 Mbytes 页数：11 Pages	RECTRON 丽正国际	RECTRON

更多20N650供应商更新时间2025-9-21 11:06:00