SPA20N65C3

Marking：20N65C3；Package：TO-220FP；Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0

SPI20N65C3

Marking：20N65C3；Package：TO-262；Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0

SPP20N65C3

Marking：20N65C3；Package：TO-220；Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Highpeakcurrentcapability •Improvedtransconductance •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC0

SPA20N65C3

Marking：20N65C3；Package：TO-220FP；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

SPA20N65C3

Marking：20N65C3；Package：TO-220FP；New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

SPI20N65C3

Marking：20N65C3；Package：TO-262；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

SPI20N65C3

Marking：20N65C3；Package：TO-262；New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

SPP20N65C3

Marking：20N65C3；Package：TO-220；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

SPP20N65C3

Marking：20N65C3；Package：TO-220；New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated