丝印：20N65C3；Package：TO-220；Cool MOS??Power Transistor

Feature • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 220 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC0

文件：784.74 Kbytes 页数：14 Pages

Infineon

英飞凌

丝印：20N65C3；Package：TO-220；New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

文件：1.94391 Mbytes 页数：15 Pages

Infineon

英飞凌

丝印：20N65C3；Package：TO-220；New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：622.31 Kbytes 页数：15 Pages

Infineon

英飞凌

N-Channel MOSFET Transistor

文件：338.98 Kbytes 页数：2 Pages

ISC

无锡固电

500V-900V CoolMOS™ N-Channel Power MOSFET

650V CoolMOS™ C3 is Infineon's third series of CoolMOS™ with market entry in 2001. Replacement for 650V CoolMOS™ C3 is CoolMOS™ P7. • Low specific on-state resistance (RDS(on)*A)\n• Very low energy storage in output capacitance (Eoss) @400V\n• Low gate charge (Qg)\n• Fieldproven CoolMOS™ quality\n• CoolMOS™ technology has been manufactured by Infineon since 1998\n\n优势:\n• High efficiency and power density\n• Outstanding cost/per;

Infineon

英飞凌

New revolutionary high voltage technology Worldwide best RDS(on) in TO 220

文件：1.94391 Mbytes 页数：15 Pages

Infineon

英飞凌

New revolutionary high voltage technology Ultra low gate charge Extreme dv/dt rated

文件：622.31 Kbytes 页数：15 Pages

Infineon

英飞凌