丝印：20NC；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Tools, Battery Operated Vacuum

文件：210.52 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：20NC；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 20.3 m, 27 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS020N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr

文件：280.16 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Miniature Basic Pressure Sensors

文件：164.06 Kbytes 页数：3 Pages

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