N-channel 650V - 0.25廓 - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh??Power MOSFET

Description This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most dema

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STMICROELECTRONICS

意法半导体

丝印：15NM65N；Package：220FP；N-channel 650 V, 0.35 廓 typ., 12 A MDmesh??II Power MOSFETs in TO-220FP and I짼PAKFP packages

文件：923.27 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Isc N-Channel MOSFET Transistor

文件：311.96 Kbytes 页数：2 Pages

ISC

无锡固电

N-channel 650 V, 0.35 廓 typ., 12 A MDmesh??II Power MOSFETs in TO-220FP and I짼PAKFP packages

文件：923.27 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

N沟道650 V、0.35 Ohm典型值、12 A MDmesh II功率MOSFET，TO-220FP封装

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFETs associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the mos • 100% avalanche tested \n• Low input capacitance and gate charge \n• Low gate input resistance;

ST

意法半导体