AU1501P1

Marking：15P；Package：DFN1006-2；1-Line Uni-directional TVS Diode

AU1501P4-3

Marking：15P；Package：DFN2020-3；1-Line High Power TVS Diode

LPB2680LT1G

Marking：15P；Package：SOT23LC；P-Channel 60-V (D-S) MOSFET Low RDS(on) trench technology

SDA1501DN

Marking：15P；Package：DFN1006；UNI-DIRECTIONAL TVS DIOD E

SDA1511DN

Marking：15P；Package：DFN1006；UNI-DIRECTIONAL TVS DIOD E

NTTFS015P03P8ZTAG

Marking：15P3；Package：WDFN8；MOSFET ??Power, Single, P-Channel, 8FL -30 V, 7.5 m

Features •UltraLowRDS(on)toImproveSystemEfficiency •AdvancedPackageTechnologyin3.3x3.3mmforSpaceSavingand ExcellentThermalConduction •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •PowerLoadSwitch •Protection:ReverseCu

NTTFS015P03P8ZTWG

Marking：15P3；Package：WDFN8；MOSFET ??Power, Single, P-Channel, 8FL -30 V, 7.5 m

Features •UltraLowRDS(on)toImproveSystemEfficiency •AdvancedPackageTechnologyin3.3x3.3mmforSpaceSavingand ExcellentThermalConduction •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •PowerLoadSwitch •Protection:ReverseCu

NVTFS015P03P8ZTAG

Marking：15P3；Package：WDFN8；MOSFET - Power, Single P-Channel, 8FL -30 V, 7.5 m, -88.6 A

Features •UltraLowRDS(on)toImproveSystemEfficiency •AdvancedPackageTechnologyin3.3x3.3mmforSpaceSaving andExcellentThermalConduction •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •

NVTFWS015P03P8ZTAG

Marking：15PW；Package：WDFN8；MOSFET - Power, Single P-Channel, 8FL -30 V, 7.5 m, -88.6 A

Features •UltraLowRDS(on)toImproveSystemEfficiency •AdvancedPackageTechnologyin3.3x3.3mmforSpaceSaving andExcellentThermalConduction •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •

SPD15P10PG

Marking：15P10P；Package：PG-TO252-3；SIPMOS짰 Small-Signal-Transistor

Features .P-Channel •Enhancementmode •Normallevel •Avalancherated •Pb-freeleadplating;RoHScompliant *QualifiedaccordingtoAECQ101