丝印：15P3；Package：WDFN8；MOSFET - Power, Single P-Channel, 8FL -30 V, 7.5 m, -88.6 A

Features • Ultra Low RDS(on) to Improve System Efficiency • Advanced Package Technology in 3.3 x 3.3 mm for Space Saving and Excellent Thermal Conduction • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications •

文件：260.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single P-Channel, 8FL -30 V, 7.5 m, -88.6 A

Features • Ultra Low RDS(on) to Improve System Efficiency • Advanced Package Technology in 3.3 x 3.3 mm for Space Saving and Excellent Thermal Conduction • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications •

文件：260.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single, P-Channel, 8FL -30 V, 7.5 m

Features • Ultra Low RDS(on) to Improve System Efficiency • Advanced Package Technology in 3.3x3.3mm for Space Saving and Excellent Thermal Conduction • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Load Switch • Protection: Reverse Cu

文件：209.37 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single, P-Channel, 8FL -30 V, 7.5 m

Features • Ultra Low RDS(on) to Improve System Efficiency • Advanced Package Technology in 3.3x3.3mm for Space Saving and Excellent Thermal Conduction • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Load Switch • Protection: Reverse Cu

文件：209.37 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single, P-Channel, 8FL -30 V, 7.5 m

Features • Ultra Low RDS(on) to Improve System Efficiency • Advanced Package Technology in 3.3x3.3mm for Space Saving and Excellent Thermal Conduction • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications • Power Load Switch • Protection: Reverse Cu

文件：209.37 Kbytes 页数：7 Pages

ONSEMI

安森美半导体