MOSFET - Power, Single N-Channel, 8FL 60 V, 16.3 m, 32 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr

文件：280.43 Kbytes 页数：8 Pages

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安森美半导体

丝印：16NC；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 16.3 m, 32 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr

文件：280.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体

Power MOSFET, Single, N-Channel, µ8FL, 60 V, 16.3 mΩ, 32 A

Automotive Power MOSFET in a 3.3 x 3.3 mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications. • Small Footprint (3.3 x 3.3 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• NVTFWS016N06C − Wettable Flank Option\n• Enhanced OpticalInspection\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive qualified\n• These Devices a;

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, 8FL 60 V, 16.3 m, 32 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr

文件：280.43 Kbytes 页数：8 Pages

ONSEMI

安森美半导体