丝印：16NW；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 16.3 m, 32 A

Features • Small Footprint (3.3 x 3.3 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVTFWS016N06C − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Fr

文件：280.43 Kbytes 页数：8 Pages

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安森美半导体

OptiMOSTM Power-MOSFET

文件：610.8 Kbytes 页数：10 Pages

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New OptiMOS??40V and 60V

文件：1.02174 Mbytes 页数：2 Pages

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OptiMOSTM Power-MOSFET, 60 V

Features • Double side cooled package-with lowest Juntion-top thermal resistance • 175°C rated • Optimized for synchronous rectification • 100 avalanche tested • Superior thermal resistance • N-channel • Pb-free lead plating; RoHS compliant • Halogen-free according to IEC61249-2-21 • High

文件：997.37 Kbytes 页数：11 Pages

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英飞凌