NVTFS024N06C

MOSFET - Power, Single N-Channel, 8FL 60 V, 22.6 m, 24 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS024N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre

NVTFS024N06CTAG

Marking：24NC；Package：8FL；MOSFET - Power, Single N-Channel, 8FL 60 V, 22.6 m, 24 A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS024N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre

024N06N

OptiMOS??Power-TransistorFeaturesIdealforhighfrequencyswitchingandsync.rec.

Features •Idealforhighfrequencyswitchingandsync.rec. •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •Qualifiedaccordin

FDB024N06

N-ChannelPowerTrench짰MOSFET60V,265A,2.4m廓

GeneralDescription ThisN-ChannelMOSFETisproducedusingFairchildSemiconductor’sadvancedPowerTrenchprocessthathasbeenespeciallytailoredtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance. Features •RDS(on)=1.8mΩ(Typ.)@VGS=10V,ID=75A •F

KU024N06P

N-chTrenchMOSFET

GeneralDescription ThisTrenchMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.ItismainlysuitableforDC/DCConverter,SynchronousRectificationandaloadswitchinbatterypoweredapplications FEATU

NTTFS024N06C

MOSFET–Power,SingleN-Channel,8FL

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •PowerTools,BatteryOperatedVacuum

NVMFD024N06C

MOSFET??Power,DualN-Channel,SO-8FL60V,22.6m,24A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWD024N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Hal

NVMFS024N06C

MOSFET-Power,SingleN-Channel,SO-8FL60V,22m,25A

NVTFWS024N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,22.6m,24A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS024N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre