N-channel 600 V, 0.14 Ohm typ., 20 A MDmesh M2 Power MOSFET in a I2PAKFP package

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Extremely low gate charge\nExcellent output capacitance (C\noss) profile\n100% avalanche tested\nZener-protected;

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丝印：26N60M2；Package：I2PAKFP；N-channel 600 V, 0.14 廓 typ., 20 A MDmesh??M2 Power MOSFETs in TO-220FP and I짼PAKFP packages

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STMICROELECTRONICS

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N-channel 600 V, 0.14 Ω typ., 20 A MDmeshTM M2 Power MOSFET in TO-220FP ultra narrow leads package

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description This device is an N-channel Power MOSFET developed using MDmesh™ M2 technology. Thanks to its strip layout and an improved vertical structure, the devi

文件：704.54 Kbytes 页数：12 Pages

STMICROELECTRONICS

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N-channel 600 V, 0.14 Ω typ., 20 A MDmeshTM M2 Power MOSFETs in TO-220 and TO-247 packages

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these de

文件：804.83 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.14 Ω typ., 20 A MDmeshTM M2 Power MOSFETs in TO-220 and TO-247 packages

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these de

文件：804.83 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体