N-channel 600 V, 0.14 Ω typ., 20 A MDmeshTM M2 Power MOSFETs in TO-220 and TO-247 packages

Features  Extremely low gate charge  Excellent output capacitance (COSS) profile  100 avalanche tested  Zener-protected Description These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, these de

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STMICROELECTRONICS

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N沟道600 V、0.14 Ohm典型值、20 A MDmesh M2功率MOSFET，TO-247封装

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. • Extremely low gate charge \n• Excellent output capacitance (Coss) profile \n• 100% avalanche tested \n• Zener-protected;

ST

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N-channel 600 V, 0.14 廓 typ., 20 A MDmesh??M2 Power MOSFETs in TO-220FP and I짼PAKFP packages

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STMICROELECTRONICS

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isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 20A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) -RDS(on) = 165mΩ(Max)@VGS= 10V APPLICATION ·Motor drive, DC-DC converter, power switch and solenoid drive.

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ISC

无锡固电

N-channel 600 V, 0.14 廓 typ., 20 A MDmesh??M2 Power MOSFETs in TO-220FP and I짼PAKFP packages

文件：434.84 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体