STW26N60M2中文资料意法半导体数据手册PDF规格书

特性 Features

 Extremely low gate charge

 Excellent output capacitance (COSS) profile

 100 avalanche tested

 Zener-protected

描述 Description

These devices are N-channel Power MOSFETs

developed using MDmesh™ M2 technology.

Thanks to their strip layout and improved vertical

structure, these devices exhibit low on-resistance

and optimized switching characteristics,

rendering them suitable for the most demanding

high efficiency converters.

Applications

 Switching applications