N沟道800 V、0.55 Ohm典型值、8 A MDmesh K5功率MOSFET，TO-220封装

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • Industry’s lowest RDS(on) x area \n• Industry’s best figure of merit (FoM) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

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N-channel 800 V, 0.55 typ., 8 A MDmesh K5 Power MOSFET in a TO-220 package

文件：741.7 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a D²PAK package

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：920.57 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a DPAK package

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tec

文件：842.01 Kbytes 页数：17 Pages

STMICROELECTRONICS

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N-channel 800 V, 0.55 廓 typ., 8 A MDmesh??K5 Power MOSFET in a TO-220FP package

文件：714.63 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体