丝印：10LN80K5；Package：DPAK；N-channel 800 V, 0.55 Ω typ., 8 A MDmesh™ K5 Power MOSFET in a DPAK package

Features  Industry’s lowest RDS(on) x area  Industry’s best FoM (figure of merit)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tec

文件：842.01 Kbytes 页数：17 Pages

STMICROELECTRONICS

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N沟道800 V、0.55 Ohm典型值、8 A MDmesh K5功率MOSFET，DPAK封装

这款超高压N-沟道功率MOSFET 采用MDmesh™ K5技术进行设计。该技术以创新专有的垂直工艺为基础。因此，在要求高功率密度和高效率的应用中，导通电阻显著降低，并具有极低的栅极电荷。 • 业界领先的低RDS(on) x 面积 \n• 业界出色的品质因数（FoM） \n• 极低的栅极电荷 \n• 经过100％雪崩测试 \n• 稳压保护;

ST

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N-channel 800 V, 0.55 廓 typ., 8 A MDmesh??K5 Power MOSFET in a TO-220FP package

文件：714.63 Kbytes 页数：14 Pages

STMICROELECTRONICS

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N-channel 800 V, 0.55 廓 typ., 8 A MDmesh??K5 Power MOSFET in a I짼PAKFP package

文件：628.74 Kbytes 页数：13 Pages

STMICROELECTRONICS

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N-channel 800 V, 0.59 Ω typ., 6 A MDmesh™ K5 Power MOSFET in a PowerFLAT™ 5x6 VHV package

Features  Industry’s lowest RDS(on) x area  Industry’s best figure of merit (FoM)  Ultra-low gate charge  100 avalanche tested  Zener-protected Applications  Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technolog

文件：833.4 Kbytes 页数：17 Pages

STMICROELECTRONICS

意法半导体