丝印：10N600；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Description The RM10N600LD use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Fea

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