丝印：10N100；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Features Vos =100Vl0 =10A Rosin)

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RECTRON

丽正国际

丝印：10N100；Package：SOP-8；N-Channel Enhancement Mode Power MOSFET

Description The RM10N100S8 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =10A RDS(ON)

文件：425.06 Kbytes 页数：7 Pages

RECTRON

丽正国际

10A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

文件：626.65 Kbytes 页数：7 Pages

UTC

友顺

10A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

文件：626.65 Kbytes 页数：7 Pages

UTC

友顺

10A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

文件：626.65 Kbytes 页数：7 Pages

UTC

友顺

10A, 1000V N-CHANNEL POWER MOSFET

 DESCRIPTION The UTC 10N100-FL is a high voltage power MOSFET combines advanced trench MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high sp

文件：626.65 Kbytes 页数：7 Pages

UTC

友顺