丝印：10N60；Package：TO-220C；10A 600V N-channel Enhancement Mode Power MOSFET

文件：976.2 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：10N60；Package：TO-220C；10A 600V N-channel Enhancement Mode Power MOSFET

文件：964.56 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：10N60；Package：TO-220C；10A 600V N-channel Enhancement Mode Power MOSFET

文件：964.93 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：10N60；Package：TO-220C；10A 600V N-channel Enhancement Mode Power MOSFET

文件：963.95 Kbytes 页数：11 Pages

WXDH

东海半导体

丝印：10N600；Package：TO-252-2L；N-Channel Enhancement Mode Power MOSFET

General Description The RM10N600LD use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications. Fea

文件：1.86187 Mbytes 页数：9 Pages

RECTRON

丽正国际

丝印：10N60M2；Package：PowerFLAT；N-channel 600 V, 0.580 廓 typ., 5.5 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge

文件：1.02603 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

丝印：10N60DM2；Package：DPAK；N-channel 600 V, 0.440 廓 typ., 8 A MDmesh??DM2 Power MOSFET in a DPAK package

文件：813.84 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

丝印：10N60AF；Package：TO-220F(0.5mm)；10A 600V N-channel enhanced field effect transistor

文件：962.23 Kbytes 页数：6 Pages

YFWDIODE

佑风微

丝印：10N60AS；Package：TO-263；10A 600V N-channel enhanced field effect transistor

文件：962.23 Kbytes 页数：6 Pages

YFWDIODE

佑风微

丝印：10N60AS；Package：TO-263；10A 600V N-channel enhanced field effect transistor

文件：962.23 Kbytes 页数：6 Pages

YFWDIODE

佑风微