N沟道600 V、0.440 Ohm典型值、8 A MDmesh DM2功率MOSFET，DPAK封装

This high-voltage N-channel Power MOSFET is part of the MDmesh DM2 fast-recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shif • Fast-recovery body diode \n• Extremely low gate charge and input capacitance \n• Low on-resistance \n• 100% avalanche tested \n• Extremely high dv/dt ruggedness \n• Zener-protected;

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意法半导体

丝印：10N60DM2；Package：DPAK；N-channel 600 V, 0.440 廓 typ., 8 A MDmesh??DM2 Power MOSFET in a DPAK package

文件：813.84 Kbytes 页数：14 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.440 (ohm) typ., 8 A MDmesh DM2 Power MOSFET in a TO-220FP package

文件：711.46 Kbytes 页数：12 Pages

STMICROELECTRONICS

意法半导体

TO-252

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TO-252

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