丝印：10N60M2；Package：PowerFLAT；N-channel 600 V, 0.580 廓 typ., 5.5 A MDmesh II Plus??low Qg Power MOSFET in a PowerFLAT??5x6 HV package

Description This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge

文件：1.02603 Mbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

N-channel 600 V, 0.58 Ohm typ., 5.5 A MDmesh M2 Power MOSFET in a PowerFLAT(TM) 5x6 HV package

This device is an N-channel Power MOSFET developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore sui • Extremely low gate charge\n• Lower RDS(on)x area vs previous generation\n• Low gate input resistance• 100% avalanche tested\n• Zener-protected;

ST

意法半导体

N-Channel 650V (D-S) Power MOSFET

文件：1.10783 Mbytes 页数：10 Pages

VBSEMI

微碧半导体

N-channel 600 V, 0.550 typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D짼PAK

Description These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the companys strip layout to yield one of the worlds lowest on-resistance and gate charge. They

文件：1.63832 Mbytes 页数：24 Pages

STMICROELECTRONICS

意法半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID=7.5A@ TC=25℃ ·Drain Source Voltage -VDSS=600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 0.6Ω(Max)@VGS= 10V DESCRIPTION ·Motor drive, DC-DC converter, power switch and solenoid drive.

文件：372.07 Kbytes 页数：2 Pages

ISC

无锡固电