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STL100N3LLH6

Marking:100N3LLH6;Package:PowerFLAT;N-channel 30 V, 0.0025 Ω, 25 A PowerFLAT™ (5x6)STripFET™ VI DeepGATE™ Power MOSFET

Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Highavalancheruggedness ■Lowgatedrivepowerlosses ■Verylowswitchinggatecharge Application ■Switchingapplications Description Thisproductutilizesthe6thgenerationofdesign rules

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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