Automotive-grade N-channel 650 V, 0.95 Ω typ., 5 A, MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package

Features • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested • Zener-protected Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovati

文件：588.42 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

Automotive-grade N-channel 650 V, 0.95 Ohm typ., 5 A, MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. • AEC-Q101 qualified \n• Industry’s lowest RDS(on) x area \n• Industry’s best FoM (figure of merit) \n• Ultra-low gate charge \n• 100% avalanche tested \n• Zener-protected;

ST

意法半导体

Automotive-grade N-channel 650 V, 0.95 Ω typ., 5 A, MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package

Features • AEC-Q101 qualified • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100 avalanche tested • Zener-protected Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovati

文件：588.42 Kbytes 页数：16 Pages

STMICROELECTRONICS

意法半导体

PowerFLAT-5x5-12

ST

上传：深圳市拓亿芯电子有限公司

DFN5X6

ST/意法

上传：深圳市富芯乐电子科技有限公司