MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 4.5 m, 92 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectificat

文件：162.75 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET - Power, Single N-Channel, STD Gate, SO8FL 80 V, 4.5 m, 92 A

Features • Low QRR, Soft Recovery Body Diode • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • Synchronous Rectificat

文件：162.75 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

Single N-Channel Power MOSFET 80V, 92 A, 4.5 mΩ

Automotive Power MOSFET in a 5x6mm flat lead package designed for compact and efficient designs and including high thermal performance. Wettable Flank Option available for Enhanced Optical Inspection. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications.

ONSEMI

安森美半导体

MOSFET, N-Channel Shielded Gate, POWERTRENCH

文件：456.9 Kbytes 页数：7 Pages

ONSEMI

安森美半导体