MOSFET ??Power, Single N-Channel 60 V, 1.3 m, 262 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：376.96 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：1D4N06CL；Package：LFPAK8；MOSFET ??Power, Single N-Channel 60 V, 1.3 m, 262 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：376.96 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

功率 MOSFET， 60 V，1.4Ω，220 A，单 N 沟道

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

ONSEMI

安森美半导体

MOSFET – Power, Single N-Channel 60 V, 1.49 m, 198 A NVMJST1D4N06CL

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 Top Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：316.63 Kbytes 页数：7 Pages

ONSEMI

安森美半导体