MOSFET – Power, Single N-Channel 60 V, 1.49 m, 198 A NVMJST1D4N06CL

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 Top Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：316.63 Kbytes 页数：7 Pages

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Single N-Channel Power MOSFET 60V, 198, 1.49 mΩ on Top Cool Package

Automotive Power MOSFET in a TCPAK5x7 package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability. • Top Side Cooling\n• Increase applications power density\n• Small Footprint (5x7 mm)\n• Compact Design\n• Low RDS(on)\n• Minimize Conduction Losses\n• Low QG and Capacitance\n• Minimize Driver Losses\n• AEC−Q101 Qualified and PPAP Capable\n• Automotive Qualified\n• RoHS Compliant;

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MOSFET ??Power, Single N-Channel 60 V, 1.3 m, 262 A

文件：374.7 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Single N-Channel 60 V, 1.3 m, 262 A

文件：374.7 Kbytes 页数：7 Pages

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安森美半导体

MOSFET ??Power, Single N-Channel 60 V, 1.3 m, 262 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK8 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：376.96 Kbytes 页数：7 Pages

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安森美半导体