MOSFET – Power, Single N-Channel 40 V, 1.25 m, 451 A

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 5x7 Top Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：327.79 Kbytes 页数：7 Pages

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安森美半导体

丝印：1D24C；Package：TCPAK57；MOSFET – Power, Single N-Channel 40 V, 1.25 m, 451 A

Features • Small Footprint (5x7 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • TCPAK57 5x7 Top Cool Package • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：327.79 Kbytes 页数：7 Pages

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安森美半导体

Single N-Channel Power MOSFET 40V, 268A, 1.2 mΩ on Top Cool Package

Automotive Power MOSFET in a TCPAK5x7 package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability. • Top Side Cooling\n• Small Footprint (5x7 mm)\n• Low RDS(on)\n• Low QG and Capacitance\n• Gull-wings leads for an improved BLR performance\n• AEC−Q101 Qualified and PPAP Capable\n• RoHS Compliant\n;

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安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 1.1 m, 258 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：342.62 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single N-Channel 40 V, 1.1 m, 258 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：342.62 Kbytes 页数：7 Pages

ONSEMI

安森美半导体