MOSFET – Power, Single N-Channel 60 V, 27.5 m, 21 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：339.78 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

丝印：025N06CL；Package：LFPAK4；MOSFET – Power, Single N-Channel 60 V, 27.5 m, 21 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：339.78 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

功率 MOSFET，单 N 沟道，60 V，30Ω，20 A

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

ONSEMI

安森美半导体

N -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF025N06NG uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switchi

文件：4.25167 Mbytes 页数：6 Pages

TUOFENG

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