N -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF025N06NG uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switchi

文件：4.25167 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

场效应管(MOSFET)

TUOFENG

拓锋半导体

N-Channel PowerTrench짰 MOSFET 60V, 265A, 2.5m廓

文件：540.24 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 265A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m

文件：299.05 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench짰 MOSFET 60V, 265A, 2.5m廓

文件：600.22 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体