P -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF030P02N combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDSON .This device is ideal for load switch and battery protection applications. ● Features Advance high cell density Trench technology Low RDS(ON) to min

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TUOFENG

拓锋半导体

场效应管(MOSFET)

TUOFENG

拓锋半导体

DC-DC Converter (-20V, -3.0A)

Features 1) Low on-resistance. (80mΩ at 2.5V) 2) High power package. 3) High speed switching. 4) Low voltage drive. (2.5V) Applications DC-DC converter

文件：77.57 Kbytes 页数：5 Pages

ROHM

罗姆

P-Channel 20 V (D-S) MOSFET

文件：1.06029 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

DC-DC Converter (-20V, -3.0A)

文件：94.67 Kbytes 页数：5 Pages

ROHM

罗姆