丝印：TF035N03N；Package：PDFNWB5x6-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF035N03N combines advanced trench MOSFETtechnology with a low resistance package to provideextremely low RDS(ON) .This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimiz

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