丝印：TF060N03M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF060N03M uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching

文件：4.28487 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

场效应管(MOSFET)

TUOFENG

拓锋半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF060N03N uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching

文件：4.2957 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

N-Channel Power MOSFET

文件：466.83 Kbytes 页数：6 Pages

TSC

台湾半导体

30V N-Channel Power MOSFET

文件：366.29 Kbytes 页数：5 Pages

TSC

台湾半导体