TF060N03M芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
TF060N03M	文件：4.28487 Mbytes Page：6 Pages	丝印：TF060N03M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ● General Description The TF060N03M uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching 文件：4.28487 Mbytes 页数：6 Pages	TUOFENG 拓锋半导体	TUOFENG
TF060N03M	文件：4.28487 Mbytes Page：6 Pages	丝印：TF060N03M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ● General Description The TF060N03M uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching 文件：4.28487 Mbytes 页数：6 Pages	TUOFENG 拓锋半导体	TUOFENG

更多TF060N03M供应商更新时间2025-10-30 11:06:00