TF30P02芯片丝印丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
TF30P02	文件：2.20014 Mbytes Page：5 Pages	丝印：TF30P02；Package：TO-251；P -CHANNEL ENHANCEMENT MODE POWER MOSFET ● General Description The TF30P02 combines advanced trench MOSFET technology with a low resistance package toprovide extremely low RDS(ON) . ● Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resist 文件：2.20014 Mbytes 页数：5 Pages	TUOFENG 拓锋半导体	TUOFENG
TF30P02	文件：2.20014 Mbytes Page：5 Pages	丝印：TF30P02；Package：TO-251；P -CHANNEL ENHANCEMENT MODE POWER MOSFET ● General Description The TF30P02 combines advanced trench MOSFET technology with a low resistance package toprovide extremely low RDS(ON) . ● Features Advance high cell density Trench technology Low RDS(ON) to minimize conductive loss Low Gate Charge for fast switching Low Thermal resist 文件：2.20014 Mbytes 页数：5 Pages	TUOFENG 拓锋半导体	TUOFENG

更多TF30P02供应商更新时间2025-10-31 11:06:00