丝印：TF9926B；Package：SOP-8；Plastic-Encapsulate MOSFETS

Description The TF9926B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability

文件：3.51073 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

丝印：TF9926B；Package：SOP-8；Plastic-Encapsulate MOSFETS

Description The TF9926B uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. General Features ● High power and current handing capability

文件：3.51073 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体