TFS040N03N芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
TFS040N03N	文件：4.19342 Mbytes Page：6 Pages	丝印：TFS040N03N；Package：DFN5060-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The TFS040N03N uses advanced trench technology to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature VDS =30V , ID =48A RDS(ON) 文件：4.19342 Mbytes 页数：6 Pages	TUOFENG 拓锋半导体	TUOFENG
TFS040N03N	文件：4.19342 Mbytes Page：6 Pages	丝印：TFS040N03N；Package：DFN5060-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET Description The TFS040N03N uses advanced trench technology to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature VDS =30V , ID =48A RDS(ON) 文件：4.19342 Mbytes 页数：6 Pages	TUOFENG 拓锋半导体	TUOFENG

更多TFS040N03N供应商更新时间2021-9-14 10:50:00