TFD190P03M芯片丝印丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
TFD190P03M	文件：1.96378 Mbytes Page：5 Pages	丝印：TFD190P03M；Package：PDFN3333-8L；P -CHANNEL ENHANCEMENT MODE POWER MOSFET ● General Description The TFD190P03M combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON). Two P Channel MOSFET inside for dual DIE implication. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimize conductive loss 文件：1.96378 Mbytes 页数：5 Pages	TUOFENG 拓锋半导体	TUOFENG
TFD190P03M	文件：1.96378 Mbytes Page：5 Pages	丝印：TFD190P03M；Package：PDFN3333-8L；P -CHANNEL ENHANCEMENT MODE POWER MOSFET ● General Description The TFD190P03M combines advanced trench MOSFET technology with a low resistance package to provideextremely low RDS(ON). Two P Channel MOSFET inside for dual DIE implication. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimize conductive loss 文件：1.96378 Mbytes 页数：5 Pages	TUOFENG 拓锋半导体	TUOFENG

更多TFD190P03M供应商更新时间2025-9-6 11:06:00