TF50N06芯片代码丝印对应型号-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
TF50N06	文件：2.37786 Mbytes Page：5 Pages	丝印：TF50N06；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ● General Description The TF50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .This device is ideal for load switch and battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minim 文件：2.37786 Mbytes 页数：5 Pages	TUOFENG 拓锋半导体	TUOFENG
TF50N06	文件：2.37786 Mbytes Page：5 Pages	丝印：TF50N06；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET ● General Description The TF50N06 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON) .This device is ideal for load switch and battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minim 文件：2.37786 Mbytes 页数：5 Pages	TUOFENG 拓锋半导体	TUOFENG

更多TF50N06供应商更新时间2025-9-6 11:06:00