丝印：TF90N03；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF90N03 combines advanced trench MOSFETtechnology with a low resistance package to provideextremely low RDS(ON).This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimize c

文件：5.27333 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

丝印：TF90N03；Package：TO-251；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF90N03 combines advanced trench MOSFETtechnology with a low resistance package to provideextremely low RDS(ON).This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimize c

文件：5.27333 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体