丝印：TF040N03M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF040N03M combines advanced trench MOSFETtechnology with a low resistance package to provideextremely low RDS(ON) .This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimiz

文件：2.5723 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF040N03N combines advanced trench MOSFETtechnology with a low resistance package to provideextremely low RDS(ON) .This device is ideal for load switchand battery protection applications. ● Features Advance high cell densityTrench technology Low RDS(ON) to minimiz

文件：2.41029 Mbytes 页数：5 Pages

TUOFENG

拓锋半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TFS040N03N uses advanced trench technology to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature VDS =30V , ID =48A RDS(ON)

文件：4.19342 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

30V N-Channel Power MOSFET

文件：370.25 Kbytes 页数：5 Pages

TSC

台湾半导体