丝印：TFS040N03N；Package：DFN5060-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Description The TFS040N03N uses advanced trench technology to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other switching application. General Feature VDS =30V , ID =48A RDS(ON)

文件：4.19342 Mbytes 页数：6 Pages

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N-Channel 30-V (D-S) MOSFET

文件：1.6906 Mbytes 页数：7 Pages

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文件：1.83438 Mbytes 页数：8 Pages

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Infineon

英飞凌