丝印：TF050N03M；Package：PDFNWB3.3x3.3-8L；N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF050N03M uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching

文件：3.41048 Mbytes 页数：6 Pages

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● General Description The TF050N03MG uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switchi

文件：1.42933 Mbytes 页数：6 Pages

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INFINEON

英飞凌