N -CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF030N03M uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching

文件：3.50556 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

● General Description The TF030N03N uses advanced trench technology and design to provide excellent RDS(ON) withlowgate charge. It can be used in a wide variety ofapplications. ● Features Advance device constructure Low RDS(ON) to minimize conduction loss Low Gate Charge for fast switching

文件：3.41313 Mbytes 页数：6 Pages

TUOFENG

拓锋半导体

OptiMOS?? Power-MOSFET

Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel; Logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Superior thermal resistance • Avalanc

文件：390.47 Kbytes 页数：10 Pages

Infineon

英飞凌

OptiMOS?? M-Series Power-MOSFET

Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOMSW for High Frequency SMPS • 100 avalanche tested • N-channel • Very low on-resistance RDS(on) @ VGS=4.5V • Excellent gate charge x RDS(on) product (FOM) • Qualified according to JEDEC1) for target applications •

文件：298.91 Kbytes 页数：10 Pages

Infineon

英飞凌

MOSFET ??Power, Single, N-Channel, Cool, UDFN6, 1.6x1.6x0.55 mm 30 V, 18 m, 6.9 A

文件：205.44 Kbytes 页数：8 Pages

ONSEMI

安森美半导体