BSC030N03MSG

OptiMOS?? M-Series Power-MOSFET

Features •Optimizedfor5Vdriverapplication(Notebook,VGA,POL) •LowFOMSWforHighFrequencySMPS •100avalanchetested •N-channel •Verylowon-resistanceRDS(on)@VGS=4.5V •ExcellentgatechargexRDS(on)product(FOM) •QualifiedaccordingtoJEDEC1)fortargetapplications •

BSC030N03LSG

OptiMOS??Power-MOSFET

Features •FastswitchingMOSFETforSMPS •OptimizedtechnologyforDC/DCconverters •QualifiedaccordingtoJEDEC1)fortargetapplications •N-channel;Logiclevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Superiorthermalresistance •Avalanc

NTLUS030N03C

MOSFET??Power,Single,N-Channel,Cool,UDFN6,1.6x1.6x0.55mm30V,18m,6.9A

NTLUS030N03CTAG

MOSFET??Power,Single,N-Channel,Cool,UDFN6,1.6x1.6x0.55mm30V,18m,6.9A

RHP030N03

4VDriveNchMOSFET

RHP030N03

4VDriveNchMOSFET

RHP030N03FRA

4VDriveNchMOSFET

TF030N03M

N-CHANNELENHANCEMENTMODEPOWERMOSFET

●GeneralDescription TheTF030N03Musesadvancedtrenchtechnology anddesigntoprovideexcellentRDS(ON)withlowgate charge.Itcanbeusedinawidevarietyofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching

TF030N03N

N-CHANNELENHANCEMENTMODEPOWERMOSFET

●GeneralDescription TheTF030N03NusesadvancedtrenchtechnologyanddesigntoprovideexcellentRDS(ON)withlowgatecharge.Itcanbeusedinawidevariety ofapplications. ●Features Advancedeviceconstructure LowRDS(ON)tominimizeconductionloss LowGateChargeforfastswitching