OptiMOS?? Power-Transistor

文件：420.84 Kbytes 页数：10 Pages

Infineon

英飞凌

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 92A, RDS(ON) = 8.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 10.5mW @VGS = 4.5V.

文件：513.83 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel Enhancement Mode Field Effect Transistor

FEATURES 100V, 92A, RDS(ON) = 8.2mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. TO-220 & TO-263 package. RoHS compliant. RDS(ON) = 10.5mW @VGS = 4.5V.

文件：513.83 Kbytes 页数：5 Pages

CET-MOS

华瑞

N-Channel PowerTrench짰 MOSFET

Description This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Features • RDS(on) = 8.2mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast switch

文件：454.59 Kbytes 页数：8 Pages

Fairchild

仙童半导体