isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 265A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m

文件：299.05 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench짰 MOSFET 60V, 265A, 2.5m廓

文件：540.24 Kbytes 页数：8 Pages

Fairchild

仙童半导体

N-Channel PowerTrench® MOSFET 60V, 265A, 2.5mΩ

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 60V, 265A, 2.5m廓

文件：600.22 Kbytes 页数：8 Pages

Fairchild

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=265A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 2.5mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：332.35 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel Enhancement Mode Power MOSFET

Description The GT025N06AM uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters l Synchronous Rectification

文件：674.69 Kbytes 页数：6 Pages

GOFORD

谷峰半导体