N-Channel PowerTrench MOSFET 100V, 61A, 16m?

Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 61A • Qg(tot) = 41nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC Converters and Off-line UPS • Distributed Power Architectures

文件：272.25 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 61A@ TC=25℃ ·Drain Source Voltage- : VDSS=100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 16mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mo

文件：325.35 Kbytes 页数：2 Pages

ISC

无锡固电

MOSFET N-CH 100V 61A TO-262AA

ONSEMI

安森美半导体

N-Channel PowerTrench MOSFET 100V, 61A, 16m?

Features • rDS(ON) = 14mΩ (Typ.), VGS = 10V, ID = 61A • Qg(tot) = 41nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101 Applications • DC/DC Converters and Off-line UPS • Distributed Power Architectures

文件：272.25 Kbytes 页数：11 Pages

FAIRCHILD

仙童半导体

IC for CMOS System Reset

文件：155.25 Kbytes 页数：20 Pages

MITSUMI

三美

IC for CMOS System Reset

文件：155.25 Kbytes 页数：20 Pages

MITSUMI

三美