isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 136A@ TC=25℃ ·Drain Source Voltage- : VDSS=60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.2mΩ(Max) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch m

文件：298.96 Kbytes 页数：2 Pages

ISC

无锡固电

N-Channel PowerTrench짰 MOSFET 60V, 193A, 3.2mW

文件：500.71 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

N 沟道 PowerTrench® MOSFET 60V, 193A, 3.2mΩ

该 N 沟道 MOSFET 采用飞兆半导体的 PowerTrench®工艺生产，这一先进工艺是专为最大限度地降低导通阻抗并保持卓越开关性能而定制的。 •RDS(on) = 2.6mΩ （典型值）@ VGS = 10V, ID = 75A\n•快速开关速度\n•低栅极电荷\n•高性能沟道技术可实现极低的 RDS(on)\n•高功率和高电流处理能力\n•符合 RoHS 标准;

ONSEMI

安森美半导体

N-Channel PowerTrench짰 MOSFET 60V, 100A, 3m?

文件：243.24 Kbytes 页数：10 Pages

FAIRCHILD

仙童半导体

N-Channel PowerTrench짰 MOSFET 60V, 193A, 3.2m?

文件：487.8 Kbytes 页数：8 Pages

FAIRCHILD

仙童半导体

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID=195A@ TC=25℃ ·Drain Source Voltage : VDSS= 60V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 3.1mΩ(Max) @VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC c

文件：332.6 Kbytes 页数：2 Pages

ISC

无锡固电