MOSFET ??Power, Single N-Channel 40 V, 1.1 m, 258 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：342.62 Kbytes 页数：7 Pages

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丝印：1D2N04CL；Package：LFPAK4；MOSFET ??Power, Single N-Channel 40 V, 1.1 m, 258 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • LFPAK4 Package, Industry Standard • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant

文件：342.62 Kbytes 页数：7 Pages

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安森美半导体

功率 MOSFET 40 V，1.1 mΩ，258 A，单 N 沟道

Automotive Power MOSFET in a 5x6mm LFPAK package designed for compact and efficient designs and including high thermal performance. AEC-Q101 Qualified MOSFET and PPAP capable suitable for automotive applications requiring enhanced board level reliability.

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安森美半导体

Power MOSFET 40 V, 1.2 m, 237 A, Single N?묬hannel

文件：356.69 Kbytes 页数：7 Pages

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安森美半导体

Power MOSFET 40 V, 1.2 m, 237 A, Single N?묬hannel

文件：356.69 Kbytes 页数：7 Pages

ONSEMI

安森美半导体

MOSFET ??Power, Single, N-Channel 40 V, 1.1 m, 258 A

文件：343.77 Kbytes 页数：7 Pages

ONSEMI

安森美半导体