MOSFET – Power, Single N-Channel 100 V, 23 m, 31 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AECïQ101 Qualified and PPAP Capable • These Devices are PbïFree, Halogen Free/BFR Free and are RoHS Compliant

文件：324.29 Kbytes 页数：6 Pages

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丝印：021N10MCL；Package：LFPAK4；MOSFET – Power, Single N-Channel 100 V, 23 m, 31 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • AECïQ101 Qualified and PPAP Capable • These Devices are PbïFree, Halogen Free/BFR Free and are RoHS Compliant

文件：324.29 Kbytes 页数：6 Pages

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安森美半导体

MOSFET – Power, Single N-Channel 100 V, 23 mΩ, 31 A

MOSFET – Power, Single N-Channel 100 V, 23 mΩ, 31 A • Small foot print - 5mm x 6mm\n• Compact design\n• Low Rdson\n• Minimize conduction Losses\n• Low Qg\n• Minimize switching losses\n• AEC-Q101 Qualified\n• Qualified for automotive application;

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安森美半导体

MOSFET ??Power, Single N-Channel 100 V, 23 m, 31 A

Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • NVMFWS021N10MCL − Wettable Flank Option for Enhanced Optical Inspection • AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free,

文件：325.98 Kbytes 页数：8 Pages

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安森美半导体